Semiconductor InAs quantum dot single-photon emission devices

Recent progress in the development of single -photon source devices is reviewed. The epitaxial growth of low density InAs self-assembled quantum dots, Hanbury Brown and Twiss measurements of the second order correlation functions of the luminescence from InAs single quantum dots, and the fabrication of distributed feedback Bragg microcavity structures are discussed. Electrically driven single-photon emission devices operated at liquid nitrogen temperatures have been successfully realized.