Characterization and development of nanodevices

The fabrication of carbon nanotube field-effect transistors, single-electron transistors and their integrated circuits is reported. A single-electron transistor has been successfully fabricated which can operate to 90K. Integration of two single-electron transistors by capacitive coupling has been realized. Integration of a series of single-electron transistors as well as a single-electron transistor to a high electron mobility transistor has been achieved.