Metal-to-semiconductor transition and symmetry in single-walled carbon nanotubes
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Abstract
We report our recent theoretical studies on the metal-to-semiconductor transition in squashed armchair single-walled carbon nanotubes. The transition can be achieved by a combined effect of the broken mirror symmetry and bond formation between the flattened faces in the squashed nanotubes. Furthermore, we reveal a general mechanism for this transition, namely the distinguishing of the two original equivalent sublattices in the nanotube (symmetry breaking) that opens an energy gap near the Fermi energy.
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