Epitaxial Graphene on SiC

Graphene is a promising nanoelectronic material that may replace silicon owing to its extraordinary electronic properties. Among many other methods of making Graphene, epitaxial growth on silicon carbide is of great potential in electronic application. In this paper, the band structure of Graphene is first introduced and it is explained how the band structure is related to its electronic properties, such as the anomalous quantum Hall effect, high mobility even at room temperature and ballistic transport in carbon nanotubes. The epitaxial growth method is then reviewed. By comparing the surface morphology of the material grown on different crystal face of SiC and in different conditions, it is shown that furnace grown C-face Graphene is particularly exceptional. After that, electronic characterization of C-face Graphene is discussed，where it is shown that the system has characteristics of Dirac electrons and possesses great properties.