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LYU Bo-Sai, LOU Shuo, SHEN Pei-Yue, SHI Zhi-Wen. Graphene nanoribbons for next-generation high-performance electronics[J]. PHYSICS, 2024, 53(10): 683-690. DOI: 10.7693/wl20241003
Citation: LYU Bo-Sai, LOU Shuo, SHEN Pei-Yue, SHI Zhi-Wen. Graphene nanoribbons for next-generation high-performance electronics[J]. PHYSICS, 2024, 53(10): 683-690. DOI: 10.7693/wl20241003
shu

Graphene nanoribbons for next-generation high-performance electronics

  • 1 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;

  • 2 Department of Quantum Matter Physics, University of Geneva, Geneva 1211, Switzerland

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  • Received Date: June 19, 2024
  • Published Date: October 14, 2024
    Graphical Abstract
    • Abstract
  • Graphene nanoribbons possess a tunable bandgap and high carrier mobility, making them an ideal candidate for future high-performance nanoelectronic devices. However, the preparation of high-quality nanoribbons suitable for electronic applications has been a significant challenge. This article focuses on their nanoparticle-catalyzed fabrication and the use of this technique in growing high-quality nanoribbons embedded within hexagonal boron nitride stacks. Field-effect transistors based on this structure demonstrate excellent performance, showing promise for future carbon-based nanoelectronics. Finally, we explore the potential opportunities and challenges in this field.
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    • References (29)
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