Introduction of Raman studies on several low-dimensional materials

An introduction to the research project named “Raman studies on several low-dimensional materials” is given. The project was awarded the second class of the Nature Science Prize of China as its outstanding achievements. The one of achievements is the creative contributions to the establishment of low-dimensional Raman spectroscopy, such as the identification of the intrinsic Raman spectra for typical low-dimensional semiconductors and the conformation of availability of Raman scattering principle in the low-dimensional system. In the applied research of low-dimensional Raman spectra, some unique characters of low-dimensional semiconductors are found, e.g. the defect-like nature of superlattice and carbon nano-tubes and the non-crystalline character of polar nano-crystalline semiconductors. As the applications of photoluminescence spectra for porous silicon, the “quantum confinement electrical-chemistry” formation model and the “multi-sources quantum well” light emission model were proposed. All of which are very useful for the developing of low-dimensional materials and semiconductor devices.