First demonstration of the electrical control of the valley degree of freedom

WANG Hai-Long; YE Yu; ZHAO Jian-Hua; ZHANG Xiang

doi:10.7693/wl20160805

PHYSICS > 2016 > 45(8): 516-519. > DOI: 10.7693/wl20160805

WANG Hai-Long, YE Yu, ZHAO Jian-Hua, ZHANG Xiang. First demonstration of the electrical control of the valley degree of freedom[J]. PHYSICS, 2016, 45(8): 516-519. DOI: 10.7693/wl20160805

Citation:

WANG Hai-Long, YE Yu, ZHAO Jian-Hua, ZHANG Xiang. First demonstration of the electrical control of the valley degree of freedom[J]. PHYSICS, 2016, 45(8): 516-519. DOI: 10.7693/wl20160805

Citation:

WANG Hai-Long, YE Yu, ZHAO Jian-Hua, ZHANG Xiang. First demonstration of the electrical control of the valley degree of freedom[J]. PHYSICS, 2016, 45(8): 516-519. DOI: 10.7693/wl20160805

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First demonstration of the electrical control of the valley degree of freedom

WANG Hai-Long¹,
YE Yu²,
ZHAO Jian-Hua^1,†,
ZHANG Xiang^2,††

(1 Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)
(2 University of California,3112 Etcheverry Hall,Berkeley,California 94720,USA)

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Received Date: April 26, 2016
Published Date: August 11, 2016

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Abstract

Electrical control of the charge and spin degrees of freedom is the foundation of contemporary micro- and nano-electronics, and spintronics. However, the effective electrical control of the electron valley degree of freedom in solids is still under intensive research. This article presents our recent demonstration of the electrical control of the valley polarization in a pn junction consisting of a monolayer transition metal dichalcogenide and a magnetic semiconductor (Ga,Mn)As, via electrical spin injection.

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