Interface-based perovskite oxide electronics

FANG Yue-Wen; NIE Jia-Cai; DUAN Chun-Gang

doi:10.7693/wl20160601

PHYSICS > 2016 > 45(6): 349-358. > DOI: 10.7693/wl20160601

FANG Yue-Wen, NIE Jia-Cai, DUAN Chun-Gang. Interface-based perovskite oxide electronics[J]. PHYSICS, 2016, 45(6): 349-358. DOI: 10.7693/wl20160601

Citation:

FANG Yue-Wen, NIE Jia-Cai, DUAN Chun-Gang. Interface-based perovskite oxide electronics[J]. PHYSICS, 2016, 45(6): 349-358. DOI: 10.7693/wl20160601

Citation:

FANG Yue-Wen, NIE Jia-Cai, DUAN Chun-Gang. Interface-based perovskite oxide electronics[J]. PHYSICS, 2016, 45(6): 349-358. DOI: 10.7693/wl20160601

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Interface-based perovskite oxide electronics

(1 Key Laboratory of Polar Materials and Devices,Ministry of Education,East China NormalUniversity,Shanghai 200241,China)
(2 Department of Physics,Beijing Normal University,Beijing 100875,China)

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Received Date: January 28, 2016
Published Date: June 11, 2016

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Abstract

Abstract

This brief paper reviews the advances in the oxide electronics based on transition metal oxide interfaces. In particular，the very recent developments in exploring the origin of two-dimensional electron gas，superconductivity，and magnetism at LaAlO₃/SrTiO₃ interfaces are reviewed. Some interface-based devices are also discussed. Finally，we take a glance over the related film growth techniques，characterization methods and the theoretical methods.
- perovskite,
- oxides,
- interfaces

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