The physics of silicon-on-insulator nanowire waveguides

PHYSICS > 2012 > 41(02): 107-109.

The physics of silicon-on-insulator nanowire waveguides[J]. PHYSICS, 2012, 41(02): 107-109.

Citation:

The physics of silicon-on-insulator nanowire waveguides[J]. PHYSICS, 2012, 41(02): 107-109.

Citation:

The physics of silicon-on-insulator nanowire waveguides[J]. PHYSICS, 2012, 41(02): 107-109.

Abstract

Nanowire waveguides and devices have become a key point of optoelectronics in recent years. In this paper, the physics of silion-on-insulator nanowire waveguides is analyzed and explained based on the Goos-Hnchen displacement theory. Simulation results are also presented.

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