Growth of topological insulator thin films and gate-controlled electron transport properties

We review the recent progress in the growth and electron transport studies of 3D topological insulators (TIs). The growth of bulk crystal and thin film TIs is discussed, followed by an introduction to our recent work on the growth of Bi2Se3 thin films on Si and high dielectric constant SrTiO3 substrates. In the second part we discuss the current status of the study of TI electron transport properties, and our recent results on the tuning of the chemical potential and transport properties of epitaxial Bi2Se3 thin films on SrTiO3.