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The Si/SiGe quantum cascade laser[J]. PHYSICS, 2006, 35(08): 673-678.
Citation: The Si/SiGe quantum cascade laser[J]. PHYSICS, 2006, 35(08): 673-678.
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The Si/SiGe quantum cascade laser

  • (1)厦门大学物理系厦门大学半导体光子学研究中心厦门361005

  • (2)中国科学院半导体研究所集成光电子国家重点联合实验室北京100083

  • (3)中国科学院半导体研究所集成光电子国家重点联合实验室北京1000832厦门大学物理系厦门大学半导体光子学研究中心厦门361005

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  • Published Date: August 19, 2006
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    • Abstract
  • The Si/SiGe quantum cascade laser is a new coherent IR source based on intersubband transitions, which overcomes the limitations imposed by the indirect gap. This laser will have a great impact on the development of terahertz devices and indicates a possible way to integrate active terahertz devices into silicon-based technology. In this paper we will describe the principle and latest progress in the active layer design, materials growth, and waveguide fabrication of this Si-based laser.
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