Progress of silicon based optoelectronic integrated devices

With the successive progress and improvements in device design and fabrication, silicon based light-emitting devices can now work efficiently at room temperature, with an external quantum efficiency of 0.1%. Silicon based modulators with low power consumption can attain a modulation speed as high as 1GHz, and newly reported silicon based optical detectors can detect wavelengths of 1300nm and 1550nm with a responsivity of 0.16mA/W and 0.08mA/W, respectively. The latest achievements in silicon based optoelectronic integrated devices are reviewed, and their structures and principle of operation are explained and analyzed.