Microstructured silicon——a new type of opto-electronic material
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Abstract
Arrays of sharp spikes have been formed on the surface of silicon by cumulative femtosecond laser pulse irradiation in an SF6 atmosphere. The absorbance of light by silicon with a microstructured surface is approximately 90% throughout the region from the ultraviolet (250nm) to the near infrared (2500nm). The sharp spikes formed on the surface using femtosecond laser-chemical etching are also good field-emitters. With its amazing optoelectronic properties, surface microstructured silicon shows promising potential applications in the manufacture of solar cells, optoelectronic detectors, flat displays and so forth.
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