DEVELOPMENT OF p-TYPE DOPING AND p-n JUNCTIONS OF ZnO FILM

ZnO film, as a multi-use semiconductor material, has long attracted much attention. Since the discovery of the UV luminescence of ZnO films in 1997, their preparation and the investigation of their photo-electronic properties have become a new hotspot. Recently, results of studies on electroluminescence from junction devices and photoelectronic detectors have been reported. This article summarizes the research on ZnO films, including the investigation of ZnO heterojunctions and homogeneous p-n junctions.