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A novel gaassb/inp heterojunction bipolar transistor based on bandgap engineering[J]. PHYSICS, 2002, 31(05).
Citation: A novel gaassb/inp heterojunction bipolar transistor based on bandgap engineering[J]. PHYSICS, 2002, 31(05).
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A novel gaassb/inp heterojunction bipolar transistor based on bandgap engineering

  • 山东大学晶体材料国家重点实验室 济南 250100

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  • Published Date: May 19, 2002
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  • The characteristics of a heterojunction bipolar transistor (HBT) depends closely on the properties of the material system and can be improved greatly by bandgap engineering. A novel HBT system consisting of GaAsSb/InP heterostructures and based on bandgap engineering has much better device characteristics than other material systems. Furthermore, the relative position of the bandedge plays a very important role in each of the HBTs. Recent results show that the actual properties of these GaAsSb/InP HBTs are consistent with the predictions of theoretical analysis.
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