• Overview of Chinese core journals
  • Chinese Science Citation Database(CSCD)
  • Chinese Scientific and Technological Paper and Citation Database (CSTPCD)
  • China National Knowledge Infrastructure(CNKI)
  • Chinese Science Abstracts Database(CSAD)
  • JST China
  • SCOPUS
Advanced Search
WANG Yue, CHEN Ming-Feng, HAN Hao-Jie, MA Jing. Multi-field modulation of ferroelectric films[J]. PHYSICS, 2023, 52(2): 108-115. DOI: 10.7693/wl20230204
Citation: WANG Yue, CHEN Ming-Feng, HAN Hao-Jie, MA Jing. Multi-field modulation of ferroelectric films[J]. PHYSICS, 2023, 52(2): 108-115. DOI: 10.7693/wl20230204
shu

Multi-field modulation of ferroelectric films

  • State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

More Information
  • Received Date: January 02, 2023
  • Available Online: February 17, 2023
  • Published Date: January 02, 2023
    Graphical Abstract
    • Abstract
  • Ferroelectric thin films have been widely used in non-volatile random-access memories, piezoelectric devices, pyroelectric devices and electro-optical devices. Due to the strong coupling among polarization, lattice and charge degrees of freedom, the properties of ferroelectric thin films can be tuned not only by an electric field, but also by multiple external fields. In this paper, the electrical, mechanical and optical modulations of the properties of ferroelectric thin films (i.e., polarization and conductivity) are discussed, as well as the physical mechanisms and their potential applications. The multi-field modulated ferroelectric films can overcome the limitations of traditional electric field driven devices, and provide new ideas for the design of multi-field driven ferroelectric devices.
    • FullText(HTML)
    • References (50)
  • [1]
    Martin L W, Rappe A M. Nat. Rev. Mater., 2016, 2:16087
    [2]
    Martin L W, Chu Y H, Ramesh R. Mater. Sci. Eng. R-Rep., 2010, 68:89
    [3]
    Gruverman A, Alexe M, Meier D. Nat. Commun., 2019, 10:1661
    [4]
    Li L, Xie L, Pan X. Rep. Prog. Phys., 2019, 82:126502
    [5]
    Setter N, Damjanovic D, Eng L et al. J. Appl. Phys., 2006, 100:051606
    [6]
    Wang Z J, Bai Y. Small, 2019, 15:1805088
    [7]
    Cao Y,Morozovska A,Kalinin S V. Phys. Rev. B,2017,96:184109
    [8]
    Guo J, Chen W, Chen H et al. Adv. Opt. Mater., 2021, 9:2002146
    [9]
    Dong S, Liu J M, Cheong S W et al. Adv. Phys., 2015, 64:519
    [10]
    Mundy J A, Schaab J, Kumagai Y et al. Nat. Mater., 2017, 16:622
    [11]
    Chen F, Zhu Y, Liu S et al. Phys. Rev. B, 2016, 94:180104(R)
    [12]
    Scott J F. Ferroelectrics, 2016, 503:117
    [13]
    Hashimoto S, Orihara H, Ishibashi Y. J. Phys. Soc. Jpn., 1994, 63:1601
    [14]
    Tagantsev A K, Stolichnov I, Setter N et al. Phys. Rev. B, 2002, 66:214109
    [15]
    Nataf G F, Guennou M, Gregg J M et al. Nat. Rev. Phys., 2020, 2:634
    [16]
    Seidel J, Martin L W, He Q et al. Nat. Mater., 2009, 8:229
    [17]
    Campanini M,Gradauskaite E,Trassin M et al. Nanoscale, 2020, 12:9186
    [18]
    Crassous A, Sluka T, Tagantsev A K et al. Nat. Nanotechnol., 2015, 10:614
    [19]
    Sharma P, Zhang Q, Sando D et al. Sci. Adv., 2017, 3:e1700512
    [20]
    Jiang J, Bai Z L, Chen Z H et al. Nat. Mater., 2017, 17:49
    [21]
    Chen S, Yuan S, Hou Z et al. Adv. Mater., 2021, 33:2000857
    [22]
    Ma J, Ma J, Zhang Q et al. Nat. Nanotechnol., 2018, 13:947
    [23]
    Wang J, Ma J, Huang H et al. Nat. Commun., 2022, 13:3255
    [24]
    Chen M, Ma J, Peng R C et al. Acta. Mater., 2019, 175:324
    [25]
    Cai S, Lun Y, Ji D et al. Nat. Commun., 2022, 13:5116
    [26]
    Lu X, Chen Z, Cao Y et al. Nat. Commun., 2019, 10:3951
    [27]
    Lu H, Bark C W, Esque de los Ojos D et al. Science, 2012, 336:59
    [28]
    Park S M, Wang B, Das S et al. Nat. Nanotechnol., 2018, 13:366
    [29]
    Li Q, Wang B, He Q et al. Nano. Lett., 2021, 21:445
    [30]
    Liu J, Chen W, Wu M et al. Npj. Comput. Mater., 2022, 8:137
    [31]
    Wang Y, Guo C, Chen M et al. Mechanically driven reversible polarization switching in imprinted BiFeO3 thin films. submitted
    [32]
    Das S, Wang B, Cao Y et al. Nat. Commun., 2017, 8:615
    [33]
    Kim Y, Kelly S J, Morozovska A et al. Nano. Lett., 2013, 13:4068
    [34]
    Tong S, Park W I, Choi Y Y et al. Phys. Rev. A, 2015, 3:014003
    [35]
    Hu W, Zhang C, Wang Z L. Nanotechnology, 2019, 30:042001
    [36]
    Wang L, Liu S, Feng X et al. Nat. Nanotechnol., 2020, 15:661
    [37]
    Das S, Wang B, Paudel T R et al. Nat. Commun., 2019, 10:537
    [38]
    Zhang F Y, Fan H, Han B et al. ACS Appl. Mater. Interfaces, 2021, 13:26180
    [39]
    Denton A R, Ashcroft N W. Phys. Rev. A, 1991, 43:3161
    [40]
    Sharma P, Ryu S, Burton J D et al. Nano. Lett., 2015, 15:3547
    [41]
    Veithen M,Gonze X,Ghosez P. Phys. Rev. Lett.,2004,93:187401
    [42]
    Li T, Lipatov A, Lu H et al. Nat. Commun., 2018, 9:3344
    [43]
    Du J, Xie D, Zhang Q et al. Nano Energy, 2021, 89:106439
    [44]
    Liou Y D, Chiu Y Y, Hart R T et al. Nat. Mater., 2019, 18:580
    [45]
    Cai T Y, Ju S. Acta. Phys. Sin., 2018, 67:157801
    [46]
    Alexe M, Hesse D. Nat. Commun., 2011, 2:256
    [47]
    Fridkin V M, Grekov A A, Ionov P V et al. Ferroelectrics, 1974, 8:433
    [48]
    Wang J, Ma J, Yang Y et al. ACS Appl. Electron. Mater., 2019, 1:862
    [49]
    Zhao R, Wang J, Ma J et al. Ceram. Int., 2019, 45:19550
    [50]
    Guo R, You L, Lin W et al. Nat. Commun., 2020, 11:2571
    • Related Articles

Catalog

    Get Citation
    PDF
    XML
    Article views (414) PDF downloads (1629) Cited by()
    Turn off MathJax
    Article Contents
    Abstract
    References

    Copyright © China Research Institute of Radiowave Propagation 豫ICP备16036117号

    Address： Tel：010-82649029，82649277 Fax：0373-3052232 E-mail: physics@iphy.ac.cn

    Supported by: Beijing Renhe Information Technology Co., Ltd.  Baidu Analytics

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return