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TAN Yi-Fan, ZHENG Jun-Ding, DUAN Chun-Gang. Two-dimensional ferrovalley materials and multiferroic coupling[J]. PHYSICS, 2023, 52(2): 79-88. DOI: 10.7693/wl20230201
Citation: TAN Yi-Fan, ZHENG Jun-Ding, DUAN Chun-Gang. Two-dimensional ferrovalley materials and multiferroic coupling[J]. PHYSICS, 2023, 52(2): 79-88. DOI: 10.7693/wl20230201
shu

Two-dimensional ferrovalley materials and multiferroic coupling

  • 1 Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;

  • 2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

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  • Received Date: August 16, 2022
  • Available Online: February 17, 2023
  • Published Date: August 16, 2022
    Graphical Abstract
    • Abstract
  • Valleytronic materials encode and process information by modulating the valley degrees of freedom, and have great potential for information memory devices of the next generation. The coupling of the valley degrees of freedom with various ferroic order parameters will be of great advantage for nonvolatile memory technology, and can promote the development of both valley physics and multiferroic physics. This paper presents an overview of the valleytronics physical background and enumerates various ferrovalley materials with spontaneous valley polarization. Secondly, magnetoelectric valley coupling of two-dimensional multiferroic materials is summarized, Finally, latest progress of valleytronic applications is introduced, potential applications of multiferroic coupling of two-dimensional ferrovalley materials are outlined.
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    • References (52)
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