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YUAN Shuai, SHEN Wan-Shan, LIAO Liang-Sheng. High-efficiency light-emitting diodes based on metal halide perovskite materials[J]. PHYSICS, 2021, 50(6): 385-392. DOI: 10.7693/wl20210604
Citation: YUAN Shuai, SHEN Wan-Shan, LIAO Liang-Sheng. High-efficiency light-emitting diodes based on metal halide perovskite materials[J]. PHYSICS, 2021, 50(6): 385-392. DOI: 10.7693/wl20210604

High-efficiency light-emitting diodes based on metal halide perovskite materials

  • Metal halide perovskite semiconductors have gained prominence in photovoltaic technology, with the benefits of perovskites especially evident in light-emitting applications. This class of halide semiconductors exhibits intense fluorescence, and possesses narrow emission linewidths that can be easily tuned across the entire visible spectrum and matches well with the requirements of future exhibits. Here, we provide a brief review on the principle of light-emitting diodes, and then describe the structural characteristics of perovskites and their emission properties. In addition, the device lifespan, ion migration, and spectral instability issues that limit the success of perovskites in next- generation display technologies are also discussed. Finally, we highlight the opportunities and challenges facing the field of perovskite based photoelectronic devices in the near future.
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