From magnetically doped to intrinsic magnetic topological insulators——a road towards the high temperature quantum anomalous Hall effect
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Abstract
Among the existing topological quantum effects, the quantum anomalous Hall
effect is arguably the most promising one for wide practical applications, but
the main challenge is the ultra-low temperature required. In this article we
describe the mechanism of the quantum anomalous Hall effect in magnetic
topological insulators and the key factors that determine its occurring
temperature. Recent efforts over the past years to elevate this temperature is
reviewed, particularly the latest studies on the intrinsic magnetic topological
insulator MnBi2Te4. Based on this, we present a roadmap on
how to further raise the temperature of the effect in magnetic topological
insulator-based systems.
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