WANG De-Liang, BAI Zhi-Zhong, YANG Rui-Long, HOU Ze-Rong. Critical issues of CdTe thin film solar cells[J]. PHYSICS, 2013, 42(05): 346-352. DOI: 10.7693/wl20130506
Citation:
WANG De-Liang, BAI Zhi-Zhong, YANG Rui-Long, HOU Ze-Rong. Critical issues of CdTe thin film solar cells[J]. PHYSICS, 2013, 42(05): 346-352. DOI: 10.7693/wl20130506
WANG De-Liang, BAI Zhi-Zhong, YANG Rui-Long, HOU Ze-Rong. Critical issues of CdTe thin film solar cells[J]. PHYSICS, 2013, 42(05): 346-352. DOI: 10.7693/wl20130506
Citation:
WANG De-Liang, BAI Zhi-Zhong, YANG Rui-Long, HOU Ze-Rong. Critical issues of CdTe thin film solar cells[J]. PHYSICS, 2013, 42(05): 346-352. DOI: 10.7693/wl20130506
Hefei National Laboratory for Physical Sciences at the Microscale,Key Laboratory of Energy Conversion Materials,University of Science and Technology of China,Hefei 230026,China
Four critical issues related to high efficiency CdTe thin film solar cell are discussed and studied: the quality of CdS films, back contact, CdS/CdTe interface formation, and CdCl2 heat treatment. Through control of the copper doping in the back contact we have eliminated the roll-over phenomenon in the I-V curve. The back contact barrier was reduced by formation of a Cu1.4Te compound which has a good contact with CdTe. Systematic investigations showed that relatively strong interdiffusion at the CdS/CdTe interface began to occur at around 350°C. This temperature coincides with the CdS phase transformation from cubic to hexagonal. Both S- and Te-rich CdSxTe1-x alloy formed at the interface, with x as much as 11%. Through optimization of the cell fabrication process, a CdTe solar cell efficiency as high as 14.6% has been obtained.