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表面微构造的硅材料——一种新型的光电功能材料

赵明, 苏卫锋, 赵利

赵明, 苏卫锋, 赵利. 表面微构造的硅材料——一种新型的光电功能材料[J]. 物理, 2003, 32(07).
引用本文: 赵明, 苏卫锋, 赵利. 表面微构造的硅材料——一种新型的光电功能材料[J]. 物理, 2003, 32(07).
Microstructured silicon——a new type of opto-electronic material[J]. PHYSICS, 2003, 32(07).
Citation: Microstructured silicon——a new type of opto-electronic material[J]. PHYSICS, 2003, 32(07).

表面微构造的硅材料——一种新型的光电功能材料

Microstructured silicon——a new type of opto-electronic material

  • 摘要: 在SF6气体氛围内用飞秒激光照射硅表面,可在硅表面产生准规则排列的微米量级尖峰结构,形成“黑硅”新材料.初步研究表明,这种 “黑硅”新材料对波长为250—2500nm的光波有大于90%的吸收,同时它还具有相当好的场致发射特性.由于具有这些奇特的光电性质,这种表面微构造的硅材料在光电探测器、太阳能电池、平板显示器等器件制造领域有着重要的潜在应用价值.
    Abstract: Arrays of sharp spikes have been formed on the surface of silicon by cumulative femtosecond laser pulse irradiation in an SF6 atmosphere. The absorbance of light by silicon with a microstructured surface is approximately 90% throughout the region from the ultraviolet (250nm) to the near infrared (2500nm). The sharp spikes formed on the surface using femtosecond laser-chemical etching are also good field-emitters. With its amazing optoelectronic properties, surface microstructured silicon shows promising potential applications in the manufacture of solar cells, optoelectronic detectors, flat displays and so forth.
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  • 发布日期:  2003-07-19

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