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王太宏, 赵继刚, 傅英, 李宏伟, 李卫, 王春花, 王振霖, 庞科, 刘淑琴, 符秀丽. 纳米器件的制备、表征及其应用[J]. 物理, 2002, 31(01).
引用本文: 王太宏, 赵继刚, 傅英, 李宏伟, 李卫, 王春花, 王振霖, 庞科, 刘淑琴, 符秀丽. 纳米器件的制备、表征及其应用[J]. 物理, 2002, 31(01).
Characterization and development of nanodevices[J]. PHYSICS, 2002, 31(01).
Citation: Characterization and development of nanodevices[J]. PHYSICS, 2002, 31(01).

纳米器件的制备、表征及其应用

Characterization and development of nanodevices

  • 摘要: 利用建立的常规光刻法的纳米加工工艺系统,研制碳纳米管晶体管、单电子晶体管和单电子晶体集成的纳米器件.研制出了90K的单电子晶体管,实现了两单电子晶体管的电容耦合集成、多个单电子晶体管的串联集成以及单电子晶体管与传统器件的集成.

     

    Abstract: The fabrication of carbon nanotube field-effect transistors, single-electron transistors and their integrated circuits is reported. A single-electron transistor has been successfully fabricated which can operate to 90K. Integration of two single-electron transistors by capacitive coupling has been realized. Integration of a series of single-electron transistors as well as a single-electron transistor to a high electron mobility transistor has been achieved.

     

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