Abstract: Graphene nanoribbons possess a tunable bandgap and high carrier mobility, making them an ideal candidate for future high-performance nanoelectronic devices. However, the preparation of high-quality nanoribbons suitable for electronic applications has been a significant challenge. This article focuses on their nanoparticle-catalyzed fabrication and the use of this technique in growing high-quality nanoribbons embedded within hexagonal boron nitride stacks. Field-effect transistors based on this structure demonstrate excellent performance, showing promise for future carbon-based nanoelectronics. Finally, we explore the potential opportunities and challenges in this field.