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孙 飞, 余金中. 硅基光电集成器件研究进展[J]. 物理, 2005, 34(01).
引用本文: 孙 飞, 余金中. 硅基光电集成器件研究进展[J]. 物理, 2005, 34(01).
Progress of silicon based optoelectronic integrated devices[J]. PHYSICS, 2005, 34(01).
Citation: Progress of silicon based optoelectronic integrated devices[J]. PHYSICS, 2005, 34(01).

硅基光电集成器件研究进展

Progress of silicon based optoelectronic integrated devices

  • 摘要: 随着器件结构与制作工艺的不断创新与完善,硅基发光器件已经可以实现室温下的有效工作,外量子效率可达到0.1%;低功耗的硅基高速调制器件的调制速率达到1GHz以上;而硅基光探测器对1300nm与1550nm波长的探测响应度也已分别达到了0.16mA/W和0.08mA/W.文章对硅基光电器件的研究进展情况进行了概述,并着重对几种器件的结构及工作原理进行了分析.

     

    Abstract: With the successive progress and improvements in device design and fabrication, silicon based light-emitting devices can now work efficiently at room temperature, with an external quantum efficiency of 0.1%. Silicon based modulators with low power consumption can attain a modulation speed as high as 1GHz, and newly reported silicon based optical detectors can detect wavelengths of 1300nm and 1550nm with a responsivity of 0.16mA/W and 0.08mA/W, respectively. The latest achievements in silicon based optoelectronic integrated devices are reviewed, and their structures and principle of operation are explained and analyzed.

     

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