高级检索
陈良惠, 叶晓军, 种明. GaN基蓝光半导体激光器的发展[J]. 物理, 2003, 32(05).
引用本文: 陈良惠, 叶晓军, 种明. GaN基蓝光半导体激光器的发展[J]. 物理, 2003, 32(05).
Gallium nitride based blue laser diodes[J]. PHYSICS, 2003, 32(05).
Citation: Gallium nitride based blue laser diodes[J]. PHYSICS, 2003, 32(05).

GaN基蓝光半导体激光器的发展

Gallium nitride based blue laser diodes

  • 摘要: 文章介绍了下一代光存储用半导体激光器——GaN蓝光激光器的发展状况.对衬底材料的发展现状、外延片的生长技术以及激光器的制作工艺都作了论述.阐明了GaN激光器的一些技术路线,如GaN同质生长衬底的发展,侧向外延生长技术的采用以及湿法腐蚀腔面等.另外还介绍了GaN半导体激光器数字多功能光盘(DVD)的实用化进程.

     

    Abstract: The development of GaN blue laser diodes, to be used in the next generation of optical storage systems is described. The substrates, epitaxial technology and processes involved in the manufacture of laser diode are discussed, with emphasis on the homoepitaxial substrate, epitaxial lateral overgrowth and wet etching. The practical realiaztion of GaN optical recording systems is also described.

     

/

返回文章
返回