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阎鹏勋, 杨思泽. 脉冲高能量密度等离子体薄膜制备与材料表面改性[J]. 物理, 2002, 31(08).
引用本文: 阎鹏勋, 杨思泽. 脉冲高能量密度等离子体薄膜制备与材料表面改性[J]. 物理, 2002, 31(08).
Deposition of thin films and surface modification by pulsed high energy densit[J]. PHYSICS, 2002, 31(08).
Citation: Deposition of thin films and surface modification by pulsed high energy densit[J]. PHYSICS, 2002, 31(08).

脉冲高能量密度等离子体薄膜制备与材料表面改性

Deposition of thin films and surface modification by pulsed high energy densit

  • 摘要: 脉冲高能量密度等离子体是一项全新的等离子体材料表面处理和薄膜制备技术.文章主要介绍了作者近几年来在这方面的研究成果.从理论和试验上研究了脉冲高能量密度等离子体的产生机制及其物理性质.研究了脉冲等离子体与材料相互作用的基本物理现象和物理机制.诊断测量表明,脉冲等离子体具有电子温度高(10—100eV)、等离子体密度高(1014—1016cm-3)、定向速度高(~107cm/s)、功率大(104W/cm2)等特点.在制备薄膜时具有沉积速率高,薄膜与基底粘结力强,并兼有激光表面处理、电子束处理、冲击波轰击、离子注入、溅射、化学气相沉积等综合性特点,可以在室温下合成亚稳态相和其他化合物材料.在此基础上,系统地进行了脉冲等离子体薄膜制备和材料表面改性及其机理的研究.在室温下的不同材料衬底上成功地沉积了性能良好的较大颗粒立方氮化硼、碳氮化钛、氮化钛、类金刚石、氮化铝等薄膜材料.沉积薄膜和基底之间存在一个很宽的过渡层,因此导致薄膜与基底有很强的粘结力.经脉冲等离子体处理过的金属材料表面性能得到了极大改善.

     

    Abstract: The use of pulsed high energy density plasma is a new low temperature plasma technology for material surface treatment and thin film deposition.We present detailed theoretical and experimental studies of the production mechanism and physical properties of the pulsed plasma.The basic physics of the pulsed plasmamaterial interaction has been investigated.Diagnostic measurements show that the pulsed plasma has a high electron temperature of 10—100eV,density of 1014—1016cm-3,translation velocity of ~107cm/s and power density of ~104W/cm2.Its use in material surface treatment combines the effects of laser surface treatment,electron beam treatment,shock wave bombardment,ion implantation,sputtering deposition and chemical vapor deposition.The metastable phase and other kinds of compounds can be produced on low temperature substrates.For thin film deposition,a high deposition ratio and strong film to substrate adhesion can be achieved.The thin film deposition and material surface modification by the pulsed plasma and related physical mechanism have been investigated.Thin film cBN,Ti(CN),TiN,DLC and AlN materials have been produced successfully on various substrates at room temperature.A wide interface layer exists between film and substrate,resulting in strong adhesion.Metal surface properties can be improved greatly by using this kind of treatment.

     

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